Toshiba Semiconductor and Storage TTA0002(Q)
TTA0002(Q)
- Manufacturer: Toshiba Semiconductor and Storage
- Manufacturer's number: Toshiba Semiconductor and Storage TTA0002(Q)
- Package: Bulk
- Datasheet: PDF
- Stock: 7433
- SKU: TTA0002(Q)
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 9A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Power - Max | 180 W |
| Frequency - Transition | 30MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(L) |
| Base Product Number | TTA0002 |
| RoHS Status | RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
| Other Names | TTA0002Q |
| Standard Package | 100 |
Bipolar (BJT) Transistor PNP 160 V 18 A 30MHz 180 W Through Hole TO-3P(L)
