| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
200 mA |
| Voltage - Collector Emitter Breakdown (Max) |
80 V |
| Vce Saturation (Max) @ Ib, Ic |
200mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) |
10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 10mA, 1V |
| Power - Max |
625 mW |
| Frequency - Transition |
- |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Base Product Number |
2N4410 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN 80 V 200 mA 625 mW Through Hole TO-92-3