TTC5200(Q)

NPN 150°C TJ 5μA ICBO 1 Elements TO-3PL Tray Through Hole

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: TTC5200(Q)
Package: TO-3PL
Datasheet: -
Stock: 9323
SKU: 2541-TTC5200(Q)
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Parameters
Frequency	30MHz
Number of Elements	1
Element Configuration	Single
Power Dissipation	150W
Gain Bandwidth Product	30MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	230V
Max Collector Current	15A
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A 5V
Current - Collector Cutoff (Max)	5μA ICBO
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Collector Emitter Breakdown Voltage	230V
Collector Emitter Saturation Voltage	3V
Collector Base Voltage (VCBO)	230V
Emitter Base Voltage (VEBO)	5V
hFE Min	80
Height	26mm
Length	20.5mm
Width	5.2mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3PL
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tray
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	150W

TTC5200(Q) Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.During maximum operation, collector current can be as low as 15A volts.

TTC5200(Q) Features

the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V