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Motors, Actuators, Solenoids and Drivers

An integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, normally silicon. The integration of large numbers of tiny transistors into a small chip resulted in circuits that are orders of magnitude smaller, cheaper, and faster than those constructed of discrete electronic components. IC Chips are in stock at ALLCHIPS Electronics. ALLCHIPS offers inventory, pricing, & datasheets for IC Chips. To know more, please view our large section of IC Chips below.

More Products

Product Part Number Manufacturers Package Description Datasheet Rfq
IPB60R060P7ATMA1 IPB60R060P7ATMA1 Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB N-Channel Tape & Reel (TR) 60m Ω @ 15.9A, 10V ±20V 2895pF @ 400V 67nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB IPB60R060P7ATMA1
IPB60R060P7ATMA1 IPB60R060P7ATMA1 Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB N-Channel Tape & Reel (TR) 60m Ω @ 15.9A, 10V ±20V 2895pF @ 400V 67nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB IPB60R060P7ATMA1
IPB60R060P7ATMA1 IPB60R060P7ATMA1 Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB N-Channel Tape & Reel (TR) 60m Ω @ 15.9A, 10V ±20V 2895pF @ 400V 67nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB IPB60R060P7ATMA1
FGH40N60SFDTU-F085 FGH40N60SFDTU-F085 ON Semiconductor TO-247-3 Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube FGH40N60SFDTU-F085
FGH40N60SFDTU-F085 FGH40N60SFDTU-F085 ON Semiconductor TO-247-3 Trans IGBT Chip N-CH 600V 80A 3-Pin TO-247 Tube FGH40N60SFDTU-F085
FGH40N60SFDTU FGH40N60SFDTU ON Semiconductor TO-247-3 IGBT 600V 80A 290W TO247 FGH40N60SFDTU
FQU17P06 FQU17P06 ON Semiconductor - FQU17P06
FQU17P06 FQU17P06 ON Semiconductor - FQU17P06
FQU17P06 FQU17P06 ON Semiconductor - FQU17P06
IPB60R060P7ATMA1 IPB60R060P7ATMA1 Infineon Technologies TO-263-3, D2Pak (2 Leads + Tab), TO-263AB N-Channel Tape & Reel (TR) 60m Ω @ 15.9A, 10V ±20V 2895pF @ 400V 67nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB IPB60R060P7ATMA1
MSG20T65FQC MSG20T65FQC MASPOWER - TO-247IGBTs ROHS MSG20T65FQC
BLF188XRU BLF188XRU Ampleon USA Inc. SOT539A RF FET LDMOS 135V 24.4DB SOT539A BLF188XRU
BD139 BD139 ON Semiconductor TO-225AA, TO-126-3 NPN -55°C~150°C TJ 100nA ICBO TO-225AA, TO-126-3 Bulk Through Hole BD139
BD139 BD139 STMicroelectronics TO-225AA, TO-126-3 NPN 150°C TJ 100nA ICBO 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole BD139
BD139 BD139 STMicroelectronics TO-225AA, TO-126-3 NPN 150°C TJ 100nA ICBO 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole BD139
IRF100P218XKMA1 IRF100P218XKMA1 Infineon Technologies TO-247-3 N-Channel Tube 1.28m Ω @ 100A, 10V ±20V 25000pF @ 50V 555nC @ 10V TO-247-3 IRF100P218XKMA1
BC850C BC850C NXP Semiconductors - SILICON NPN BC850C
BC850C BC850C Nexperia - -30°C ~ 70°C SILICON NPN Box Chassis Mount BC850C
GWS2350S GWS2350S Great Wall Semiconductor - GWS2350S
2SC5200OTU 2SC5200OTU ON Semiconductor TO-264-3, TO-264AA NPN -50°C~150°C TJ 5μA ICBO 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole 2SC5200OTU
2SC5200 2SC5200 STMicroelectronics TO-264-3, TO-264AA NPN 150°C TJ 5μA ICBO 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole 2SC5200
2SC5200OTU 2SC5200OTU ON Semiconductor TO-264-3, TO-264AA NPN -50°C~150°C TJ 5μA ICBO 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole 2SC5200OTU
2SC5200RTU 2SC5200RTU ON Semiconductor TO-264-3, TO-264AA NPN -50°C~150°C TJ 5μA ICBO 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole 2SC5200RTU
2SC5200OTU 2SC5200OTU ON Semiconductor TO-264-3, TO-264AA NPN -50°C~150°C TJ 5μA ICBO 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole 2SC5200OTU
2SC5200OTU 2SC5200OTU ON Semiconductor TO-264-3, TO-264AA NPN -50°C~150°C TJ 5μA ICBO 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole 2SC5200OTU
2SC5200-O(Q) 2SC5200-O(Q) Toshiba Semiconductor and Storage TO-3PL NPN 150°C TJ 5μA ICBO NPN TO-3PL Tube Through Hole 2SC5200-O(Q)
SSS5N80A SSS5N80A Samsung Semiconductor - Power Field-Effect Transistor, 3A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN SSS5N80A
KBL10 KBL10 ON Semiconductor 4-SIP, KBL Single Phase Bridge Rectifier Through Hole -55°C~150°C TJ 5μA @ 1000V 1.1V @ 4A 4-SIP, KBL Bulk KBL10
KBL10 KBL10 ON Semiconductor 4-SIP, KBL Single Phase Bridge Rectifier Through Hole -55°C~150°C TJ 5μA @ 1000V 1.1V @ 4A 4-SIP, KBL Bulk KBL10
AP18T10AGH-HF-3TR AP18T10AGH-HF-3TR Advanced Power Electronics - AP18T10AGH-HF-3TR
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