| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Transistor Type |
2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) |
100mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
10kOhms |
| Resistor - Emitter Base (R2) |
47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
500nA |
| Frequency - Transition |
250MHz |
| Power - Max |
100mW |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-553 |
| Supplier Device Package |
ESV |
| Base Product Number |
RN1707 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Other Names |
264-RN1707JE(TE85LF)TR |
| Standard Package |
4,000 |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV