| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
Automotive, AEC-Q101 |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Transistor Type |
NPN, PNP |
| Current - Collector (Ic) (Max) |
150mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 2mA, 6V |
| Power - Max |
200mW |
| Frequency - Transition |
120MHz, 150MHz |
| Operating Temperature |
- |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
US6 |
| Base Product Number |
HN1B01 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
3,000 |
Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz, 150MHz 200mW Surface Mount US6