Parameters |
Mfr |
Taiwan Semiconductor Corporation |
Series |
- |
Package |
Tape & Box (TB) |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
150 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
200 @ 150mA, 6V |
Power - Max |
500 mW |
Frequency - Transition |
80MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92 |
REACH Status |
REACH Unaffected |
ECCN |
OBSOLETE |
Other Names |
1801-KTC3198-GR-M0A2GTB |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 500 mW Through Hole TO-92