Parameters |
Mfr |
Taiwan Semiconductor Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
800 mA |
Voltage - Collector Emitter Breakdown (Max) |
45 V |
Vce Saturation (Max) @ Ib, Ic |
700mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
250 @ 100mA, 5V |
Power - Max |
625 mW |
Frequency - Transition |
100MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92 |
REACH Status |
REACH Unaffected |
ECCN |
OBSOLETE |
Other Names |
1801-BC337-25B1 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 45 V 800 mA 100MHz 625 mW Through Hole TO-92