| Parameters |
| Mfr |
Renesas |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| Transistor Type |
NPN - Pre-Biased |
| Current - Collector (Ic) (Max) |
100 mA |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Resistor - Base (R1) |
47 kOhms |
| Resistor - Emitter Base (R2) |
22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
90 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
200mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
100nA |
| Power - Max |
200 mW |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SC-59 |
| Base Product Number |
FA4L4L |
| RoHS Status |
RoHS non-compliant |
| REACH Status |
Vendor Undefined |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2156-FA4L4L-T1B-A |
| Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-59