Renesas Electronics America Inc HSG1002VE-TL-E - Renesas Electronics America Inc Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Renesas Electronics America Inc HSG1002VE-TL-E

RF 0.035A C BAND GERMANIUM NPN

  • Manufacturer: Renesas Electronics America Inc
  • Manufacturer's number: Renesas Electronics America Inc HSG1002VE-TL-E
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 519
  • SKU: HSG1002VE-TL-E
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $0.3900

Ext Price: $0.3900

Details

Tags

Parameters
Mfr Renesas Electronics America Inc
Series -
Package Bulk
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 3.5V
Frequency - Transition 38GHz
Noise Figure (dB Typ @ f) 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain 8dB ~ 19.5dB
Power - Max 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 2V
Current - Collector (Ic) (Max) 35mA
Mounting Type Surface Mount
Package / Case 4-SMD, Gull Wing
Supplier Device Package 4-MFPAK
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Standard Package 10,000
RF Transistor NPN 3.5V 35mA 38GHz 200mW Surface Mount 4-MFPAK