Parameters |
Mfr |
Renesas Electronics America Inc |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
800 mA |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Resistor - Base (R1) |
1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
4000 @ 300mA, 2V |
Vce Saturation (Max) @ Ib, Ic |
1.2V @ 1mA, 500mA |
Current - Collector Cutoff (Max) |
1µA (ICBO) |
Power - Max |
1 W |
Mounting Type |
Through Hole |
Package / Case |
3-SSIP |
Base Product Number |
2SD1697 |
RoHS Status |
Not applicable |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 80 V 800 mA 1 W Through Hole