Parameters |
Mfr |
Renesas Electronics America Inc |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
10V |
Frequency - Transition |
9GHz |
Noise Figure (dB Typ @ f) |
1.2dB @ 1GHz |
Gain |
13dB |
Power - Max |
200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 20mA, 8V |
Current - Collector (Ic) (Max) |
65mA |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT23-3 (TO-236) |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
1 |
RF Transistor NPN 10V 65mA 9GHz 200mW Surface Mount SOT23-3 (TO-236)