| Parameters |
| Mfr |
Renesas |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| Transistor Type |
NPN - Pre-Biased |
| Current - Collector (Ic) (Max) |
2 A |
| Voltage - Collector Emitter Breakdown (Max) |
60 V |
| Resistor - Base (R1) |
2.2 kOhms |
| Resistor - Emitter Base (R2) |
10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
1000 @ 1A, 5V |
| Vce Saturation (Max) @ Ib, Ic |
- |
| Current - Collector Cutoff (Max) |
100nA |
| Power - Max |
1 W |
| Mounting Type |
Through Hole |
| Package / Case |
3-SSIP |
| Supplier Device Package |
- |
| Base Product Number |
CE2F3P |
| RoHS Status |
RoHS non-compliant |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2156-CE2F3P-T-AZ |
| Standard Package |
431 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 60 V 2 A 1 W Through Hole