| Parameters |
| Mfr |
Microsemi Corporation |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
7.5 A |
| Voltage - Collector Emitter Breakdown (Max) |
100 V |
| Vce Saturation (Max) @ Ib, Ic |
2.5V @ 1A, 5A |
| Current - Collector Cutoff (Max) |
1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 2A, 4V |
| Power - Max |
150 W |
| Frequency - Transition |
- |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Supplier Device Package |
TO-82 |
| Base Product Number |
2N1016 |
| RoHS Status |
RoHS non-compliant |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 100 V 7.5 A 150 W TO-82