Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
7.5 A |
Voltage - Collector Emitter Breakdown (Max) |
200 V |
Vce Saturation (Max) @ Ib, Ic |
2.5V @ 1A, 5A |
Current - Collector Cutoff (Max) |
1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
6 @ 7.5A, 4V |
Power - Max |
150 W |
Frequency - Transition |
- |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Supplier Device Package |
TO-82 |
Base Product Number |
2N1016 |
RoHS Status |
RoHS non-compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 200 V 7.5 A 150 W TO-82