Parameters |
HTSUS |
8541.21.0095 |
Other Names |
2156-NSVMMUN2132LT1G-M01 |
Standard Package |
1 |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
PNP - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
4.7 kOhms |
Resistor - Emitter Base (R2) |
4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) |
500nA |
Power - Max |
246 mW |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 (TO-236) |
Base Product Number |
NSVMMUN2132 |
RoHS Status |
RoHS non-compliant |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)