Parameters |
Current - Collector (Ic) (Max) |
50mA |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92 (TO-226) |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Affected |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
4,000 |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
12V |
Frequency - Transition |
2GHz |
Noise Figure (dB Typ @ f) |
5dB @ 200MHz |
Gain |
15dB |
Power - Max |
350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
25 @ 3mA, 1V |
RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole TO-92 (TO-226)