| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
60 V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
300 @ 100mA, 2V |
| Power - Max |
750 mW |
| Frequency - Transition |
160MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package |
TO-92-3 |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-KSD1616ALTA-488 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3