| Parameters |
| Mfr |
onsemi |
| Series |
ESBC™ |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
2 A |
| Voltage - Collector Emitter Breakdown (Max) |
800 V |
| Vce Saturation (Max) @ Ib, Ic |
750mV @ 330mA, 1A |
| Current - Collector Cutoff (Max) |
100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 400mA, 3V |
| Power - Max |
100 W |
| Frequency - Transition |
5MHz |
| Operating Temperature |
-55°C ~ 125°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220-3 |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-FJP2160DTU-488 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 800 V 2 A 5MHz 100 W Through Hole TO-220-3