Parameters |
Mfr |
NXP USA Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
2.2kOhms |
Resistor - Emitter Base (R2) |
47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
1µA |
Frequency - Transition |
- |
Power - Max |
300mW |
Mounting Type |
Surface Mount |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Supplier Device Package |
SOT-363 |
Base Product Number |
PUMH10 |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
6,950 |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-363