Parameters |
Mfr |
NXP USA Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
10kOhms |
Resistor - Emitter Base (R2) |
47kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
1µA |
Frequency - Transition |
- |
Power - Max |
600mW |
Mounting Type |
Surface Mount |
Package / Case |
SC-74, SOT-457 |
Supplier Device Package |
6-TSOP |
Base Product Number |
PIMH9 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 600mW Surface Mount 6-TSOP