| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
400 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 250mA, 750mA |
| Current - Collector Cutoff (Max) |
1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
10 @ 400mA, 5V |
| Power - Max |
2.1 W |
| Frequency - Transition |
- |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
950 |
Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3