NXP USA Inc. PHE13003A,412 - NXP USA Inc. Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PHE13003A,412

NOW WEEN - PHE13003A - POWER BIP

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PHE13003A,412
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 6254
  • SKU: PHE13003A,412
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Parameters
Mfr NXP USA Inc.
Series -
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 400mA, 5V
Power - Max 2.1 W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 950
Bipolar (BJT) Transistor NPN 400 V 1 A 2.1 W Through Hole TO-92-3