| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) |
100mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
2.2kOhms |
| Resistor - Emitter Base (R2) |
47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
1µA |
| Frequency - Transition |
- |
| Power - Max |
300mW |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
SOT-666 |
| Base Product Number |
PEMD10 |
| HTSUS |
0000.00.0000 |
| Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666