NXP USA Inc. PDTB114EUF - NXP USA Inc. Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PDTB114EUF

NOW NEXPERIA PDTB114EUF - SMALL

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PDTB114EUF
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 6037
  • SKU: PDTB114EUF
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Parameters
Mfr NXP USA Inc.
Series -
Package Bulk
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 140 MHz
Power - Max 300 mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Base Product Number PDTB114
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 1
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 140 MHz 300 mW Surface Mount SOT-323