NXP USA Inc. PDTA123JMB,315 - NXP USA Inc. Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PDTA123JMB,315

NOW NEXPERIA PDTA123JMB - SMALL

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PDTA123JMB,315
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 190
  • SKU: PDTA123JMB,315
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $0.0300

Ext Price: $0.0300

Details

Tags

Parameters
Mfr NXP USA Inc.
Series -
Package Bulk
Product Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Frequency - Transition 180 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Supplier Device Package DFN1006B-3
Base Product Number PDTA123
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 1
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3