NXP USA Inc. PDTA113EMB,315
NOW NEXPERIA PDTA113EMB - SMALL
- Manufacturer: NXP USA Inc.
- Manufacturer's number: NXP USA Inc. PDTA113EMB,315
- Package: Bulk
- Datasheet: PDF
- Stock: 140
- SKU: PDTA113EMB,315
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 40mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 1.5mA, 30mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 180 MHz |
| Power - Max | 250 mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | DFN1006B-3 |
| Base Product Number | PDTA113 |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 1 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3
