NXP USA Inc. PBSS5130PAP,115 - NXP USA Inc. Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PBSS5130PAP,115

NOW NEXPERIA PBSS5130PAP - SMALL

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PBSS5130PAP,115
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 6193
  • SKU: PBSS5130PAP,115
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

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Parameters
Mfr NXP USA Inc.
Series -
Package Bulk
Product Status Active
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 280mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA, 2V
Power - Max 510mW
Frequency - Transition 125MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-HUSON (2x2)
Base Product Number PBSS5130
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 1
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 1A 125MHz 510mW Surface Mount 6-HUSON (2x2)