| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
2 A |
| Voltage - Collector Emitter Breakdown (Max) |
20 V |
| Vce Saturation (Max) @ Ib, Ic |
350mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) |
100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
200 @ 1A, 2V |
| Power - Max |
900 mW |
| Frequency - Transition |
210MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
SOT-666 |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 20 V 2 A 210MHz 900 mW Surface Mount SOT-666