Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
60 V |
Vce Saturation (Max) @ Ib, Ic |
460mV @ 50mA, 1A |
Current - Collector Cutoff (Max) |
100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
160 @ 100mA, 2V |
Power - Max |
325 mW |
Frequency - Transition |
150MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
3-XDFN Exposed Pad |
Supplier Device Package |
DFN1010D-3 |
RoHS Status |
RoHS non-compliant |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Other Names |
2156-PBSS5160QAZ |
Standard Package |
1 |
Bipolar (BJT) Transistor PNP 60 V 1 A 150MHz 325 mW Surface Mount DFN1010D-3