Parameters |
Mfr |
NXP Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
30 V |
Vce Saturation (Max) @ Ib, Ic |
240mV @ 100mA, 1A |
Current - Collector Cutoff (Max) |
100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
250 @ 100mA, 2V |
Power - Max |
325 mW |
Frequency - Transition |
170MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
3-XDFN Exposed Pad |
Supplier Device Package |
DFN1010D-3 |
RoHS Status |
RoHS non-compliant |
REACH Status |
Vendor Undefined |
Other Names |
2156-PBSS5130QAZ |
Standard Package |
1 |
Bipolar (BJT) Transistor PNP 30 V 1 A 170MHz 325 mW Surface Mount DFN1010D-3