Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
5 NPN |
Current - Collector (Ic) (Max) |
50mA |
Voltage - Collector Emitter Breakdown (Max) |
24V |
Vce Saturation (Max) @ Ib, Ic |
230mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) |
500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 1mA, 3V |
Power - Max |
750mW |
Frequency - Transition |
550MHz |
Operating Temperature |
-55°C ~ 125°C (TA) |
Mounting Type |
Through Hole |
Package / Case |
14-DIP (0.300", 7.62mm) |
Supplier Device Package |
14-PDIP |
Base Product Number |
NTE9 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH info available upon request |
ECCN |
EAR99 |
HTSUS |
8542.31.0000 |
Other Names |
2368-NTE912 |
Standard Package |
1 |
Bipolar (BJT) Transistor Array 5 NPN 24V 50mA 550MHz 750mW Through Hole 14-PDIP