Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
PNP |
Voltage - Collector Emitter Breakdown (Max) |
25V |
Frequency - Transition |
2.3GHz |
Noise Figure (dB Typ @ f) |
2.5dB ~ 4dB @ 200MHz ~ 800MHz |
Gain |
16dB |
Power - Max |
225mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 10V |
Current - Collector (Ic) (Max) |
50mA |
Operating Temperature |
200°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Supplier Device Package |
TO-72 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE395 |
Standard Package |
1 |
RF Transistor PNP 25V 50mA 2.3GHz 225mW Through Hole TO-72