Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
20V |
Frequency - Transition |
- |
Noise Figure (dB Typ @ f) |
2.7dB @ 45MHz |
Gain |
29dB |
Power - Max |
175mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 2mA, 10V |
Current - Collector (Ic) (Max) |
- |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Supplier Device Package |
TO-72 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE319 |
Standard Package |
1 |
RF Transistor NPN 20V 175mW Through Hole TO-72