NTE Electronics, Inc NTE2367
NTE2367
- Manufacturer: NTE Electronics, Inc
- Manufacturer's number: NTE Electronics, Inc NTE2367
- Package: Bag
- Datasheet: PDF
- Stock: 1
- SKU: NTE2367
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | NTE Electronics, Inc |
| Series | - |
| Package | Bag |
| Product Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250 MHz |
| Power - Max | 300 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Supplier Device Package | TO-92S |
| Base Product Number | NTE23 |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Other Names | 2368-NTE2367 |
| Standard Package | 1 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92S
