| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
PNP - Pre-Biased |
| Current - Collector (Ic) (Max) |
100 mA |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Resistor - Base (R1) |
22 kOhms |
| Resistor - Emitter Base (R2) |
22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
50 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) |
500nA |
| Frequency - Transition |
200 MHz |
| Power - Max |
300 mW |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 Short Body |
| Supplier Device Package |
TO-92S |
| Base Product Number |
NTE23 |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE2358 |
| Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92S