Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
8 NPN Darlington |
Current - Collector (Ic) (Max) |
600mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Vce Saturation (Max) @ Ib, Ic |
1.6V @ 350mA, 500A |
DC Current Gain (hFE) (Min) @ Ic, Vce |
- |
Power - Max |
1W |
Frequency - Transition |
- |
Operating Temperature |
-20°C ~ 85°C (TA) |
Mounting Type |
Through Hole |
Package / Case |
18-DIP (0.300", 7.62mm) |
Supplier Device Package |
18-PDIP |
Base Product Number |
NTE20 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH info available upon request |
ECCN |
EAR99 |
HTSUS |
8542.31.0000 |
Other Names |
2368-NTE2018 |
Standard Package |
1 |
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 600mA 1W Through Hole 18-PDIP