Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
19V |
Frequency - Transition |
1.1GHz |
Noise Figure (dB Typ @ f) |
- |
Gain |
- |
Power - Max |
300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
39 @ 5mA, 10V |
Current - Collector (Ic) (Max) |
50mA |
Operating Temperature |
125°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
3-SIP |
Supplier Device Package |
3-SIP |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE15 |
Standard Package |
1 |
RF Transistor NPN 19V 50mA 1.1GHz 300mW Through Hole 3-SIP