| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
19V |
| Frequency - Transition |
1.1GHz |
| Noise Figure (dB Typ @ f) |
- |
| Gain |
- |
| Power - Max |
300mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
39 @ 5mA, 10V |
| Current - Collector (Ic) (Max) |
50mA |
| Operating Temperature |
125°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
3-SIP |
| Supplier Device Package |
3-SIP |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-NTE15 |
| Standard Package |
1 |
RF Transistor NPN 19V 50mA 1.1GHz 300mW Through Hole 3-SIP