Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
12V |
Frequency - Transition |
2.1GHz |
Noise Figure (dB Typ @ f) |
6.5dB @ 60MHz |
Gain |
- |
Power - Max |
200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 8mA, 10V |
Current - Collector (Ic) (Max) |
25mA |
Operating Temperature |
100°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92 |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-NTE107 |
Standard Package |
1 |
RF Transistor NPN 12V 25mA 2.1GHz 200mW Through Hole TO-92