Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
15V |
Frequency - Transition |
800MHz |
Noise Figure (dB Typ @ f) |
6dB @ 200MHz |
Gain |
24dB |
Power - Max |
350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
25 @ 5mA, 10V |
Current - Collector (Ic) (Max) |
- |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 Long Body |
Supplier Device Package |
TO-92 (TO-226) |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-MPSH17 |
Standard Package |
1 |
RF Transistor NPN 15V 800MHz 350mW Through Hole TO-92 (TO-226)