| Parameters |
| Mfr |
NTE Electronics, Inc |
| Series |
- |
| Package |
Bag |
| Product Status |
Active |
| Transistor Type |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
25V |
| Frequency - Transition |
650MHz |
| Noise Figure (dB Typ @ f) |
- |
| Gain |
- |
| Power - Max |
350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 4mA, 10V |
| Operating Temperature |
-65°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| RoHS Status |
RoHS non-compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
2368-MPSH10 |
| Standard Package |
1 |
RF Transistor NPN 25V 650MHz 350mW Through Hole