Parameters |
Mfr |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
Product Status |
Active |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
25V |
Frequency - Transition |
650MHz |
Noise Figure (dB Typ @ f) |
- |
Gain |
- |
Power - Max |
350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
60 @ 4mA, 10V |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
RoHS Status |
RoHS non-compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2368-MPSH10 |
Standard Package |
1 |
RF Transistor NPN 25V 650MHz 350mW Through Hole