Parameters |
Mfr |
NEC Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
PNP - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
4.7 kOhms |
Resistor - Emitter Base (R2) |
10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
200mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
Power - Max |
250 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92 |
RoHS Status |
RoHS non-compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Through Hole TO-92