| Parameters |
| Mfr |
Microchip Technology |
| Series |
Military, MIL-PRF-19500/336 |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
2 PNP (Dual) |
| Current - Collector (Ic) (Max) |
50mA |
| Voltage - Collector Emitter Breakdown (Max) |
60V |
| Vce Saturation (Max) @ Ib, Ic |
250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) |
10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
150 @ 1mA, 5V |
| Power - Max |
350mW |
| Frequency - Transition |
- |
| Operating Temperature |
-65°C ~ 200°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-78-6 Metal Can |
| Supplier Device Package |
TO-78-6 |
| Base Product Number |
2N3810 |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Other Names |
150-MNS2N3810UP |
| Standard Package |
1 |
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6