Microchip Technology 2N6351E3
POWER BJT
- Manufacturer: Microchip Technology
- Manufacturer's number: Microchip Technology 2N6351E3
- Package: Bulk
- Datasheet: -
- Stock: 2598
- SKU: 2N6351E3
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Microchip Technology |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 10mA, 5A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 5V |
| Power - Max | 1 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C |
| Mounting Type | Through Hole |
| Package / Case | TO-205AC, TO-33-4 Metal Can |
| Supplier Device Package | TO-33 |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Other Names | 150-2N6351E3 |
| Standard Package | 1 |
Bipolar (BJT) Transistor NPN - Darlington 150 V 5 A 1 W Through Hole TO-33