| Parameters |
| Mfr |
Toshiba Semiconductor and Storage |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
1.5 A |
| Voltage - Collector Emitter Breakdown (Max) |
285 V |
| Vce Saturation (Max) @ Ib, Ic |
1V @ 62.5mA, 500mA |
| Current - Collector Cutoff (Max) |
10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 1mA, 5V |
| Power - Max |
1.1 W |
| Frequency - Transition |
- |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package |
PW-MOLD2 |
| Base Product Number |
TTC008 |
| RoHS Status |
RoHS Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
TTC008Q |
| Standard Package |
200 |
Bipolar (BJT) Transistor NPN 285 V 1.5 A 1.1 W Through Hole PW-MOLD2