Infineon Technologies BCR562E6327
BIPOLAR DIGITAL TRANSISTOR
- Manufacturer: Infineon Technologies
- Manufacturer's number: Infineon Technologies BCR562E6327
- Package: Bulk
- Datasheet: PDF
- Stock: 2363
- SKU: BCR562E6327
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101 |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 150 MHz |
| Power - Max | 330 mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23-3-3 |
| Base Product Number | BCR562 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 3,000 |
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 330 mW Surface Mount PG-SOT23-3-3
