Infineon Technologies BCR135TE6327
BIPOLAR DIGITAL TRANSISTOR
- Manufacturer: Infineon Technologies
- Manufacturer's number: Infineon Technologies BCR135TE6327
- Package: Bulk
- Datasheet: PDF
- Stock: 1963
- SKU: BCR135TE6327
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 150 MHz |
| Power - Max | 200 mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23-3-11 |
| Base Product Number | BCR135 |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 3,000 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23-3-11
