Parameters |
Mfr |
Infineon Technologies |
Series |
Automotive, AEC-Q101 |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
4.7 kOhms |
Resistor - Emitter Base (R2) |
47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
70 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
Frequency - Transition |
150 MHz |
Power - Max |
200 mW |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
PG-SOT23-3-3 |
Base Product Number |
BCR116 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 200 mW Surface Mount PG-SOT23-3-3