| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
- |
| Package |
Tape & Box (TB) |
| Product Status |
Obsolete |
| FET Type |
P-Channel |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Drain to Source Voltage (Vdss) |
30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
7 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
3 V @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V (VGS) |
| Resistance - RDS(On) |
125 Ohms |
| Power - Max |
400 mW |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package |
TO-92-3 |
| Base Product Number |
J175 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
10,000 |
JFET P-Channel 30 V 400 mW Through Hole TO-92-3