NXP USA Inc. PBRN113ES,126
TRANS PREBIAS NPN 0.7W TO92-3
- Manufacturer: NXP USA Inc.
- Manufacturer's number: NXP USA Inc. PBRN113ES,126
- Package: Tape & Box (TB)
- Datasheet: PDF
- Stock: 8257
- SKU: PBRN113ES,126
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Tape & Box (TB) |
| Product Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 700 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Base Product Number | PBRN113 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Standard Package | 2,000 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3
