| Parameters |
| Mfr |
Diodes Incorporated |
| Series |
- |
| Package |
Tape & Box (TB) |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
4 A |
| Voltage - Collector Emitter Breakdown (Max) |
100 V |
| Vce Saturation (Max) @ Ib, Ic |
200mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) |
50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 2A, 2V |
| Power - Max |
1.2 W |
| Frequency - Transition |
130MHz |
| Operating Temperature |
-55°C ~ 200°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
E-Line-3, Formed Leads |
| Supplier Device Package |
E-Line (TO-92 compatible) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0075 |
| Other Names |
31-ZTX853QSTZTB |
| Standard Package |
4,000 |
Bipolar (BJT) Transistor NPN 100 V 4 A 130MHz 1.2 W Through Hole E-Line (TO-92 compatible)